ace 2302 n - channel enhancement mode mosfet ver 1. 3 1 description the ace230 2 is the n - channel logic enhancement mode power field effect transistor s are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices ar e particularly suited for low voltage application such as cellular phone and notebook computer power management and battery powered circuits, and low in - line power loss are needed in a very small outline surface mount package. features ? 20v/3.6a, r ds(on) =8 0m@v gs =4.5v ? 20v/3.1a, r ds(on) =95m@v gs =2.5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability application ? power management in note book ? portable equipment ? battery powered system ? dc/dc c onverter ? load switch ? dsc ? lcd display inverter absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v continuous drain current (t j =150 ) t a =25 i d 3.2 a t a =70 2.6 pulsed drain current i dm 1 0 a continuous source current (diode conduction) i s 1.6 a power dissipation t a =25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 o c storage temperature range t stg - 55/150 o c thermal resistance - junction to ambient r ja 100 o c /w
ace 2302 n - channel enhancement mode mosfet ver 1. 3 2 packaging type sot - 23 - 3 3 1 2 ordering i nformation ace 2302 xx + h electrical characteristics t a =25 , unless other wise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 20 v gate threshold voltage v gs(th) v d =v gs , i d =250ua 0. 45 1.2 gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss v ds =2 0 v, v gs =0v 1 ua v ds = 2 0 v, v gs =0v t j = 5 5 10 on - state drain current i d(on) vds R 5 v, v gs = 4.5 v 6 a vds R 5 v, v gs = 2.5 v 4 drain - source on - resistance r ds(on) v gs = 4.5 v, i d = 3.6 a 0.050 0.0 80 v gs = 2 .5 v, i d = 3.1 a 0.0 70 0.0 95 forward g fs v ds = 5 v,i d = 3.6 a 1 0 s s o t - 2 3 - 3 description 1 gate 2 source 3 drain b m : sot - 23 - 3 pb - free halogen - free
ace 2302 n - channel enhancement mode mosfet ver 1. 3 3 transconductance diode forward voltage v sd i s = 1.6 a, v gs =0v 0.8 5 1.2 v dynamic total gate charge q g v ds =1 0 v, v gs = 4.5 v, i d = 3.6 a 5.4 1 0 nc gate - source charge q gs 0.65 gate - drain charge q gd 1.4 input capacitance ciss v ds = 10v , v gs =0v, f=1mhz 340 pf output capacitance coss 115 reverse transfer capacitance crss 3 3 turn - on time td(on) v dd = 10 v, r l = 5.5 , i d = 3.6 a, v gen = 4.5 v, r g =6 12 25 ns tr 36 60 turn - off time td(off) 34 60 tf 1 0 2 5 typical performance characteristics output characte ristics transfer characteristics v ds - drain - to - source volt age (v) v gs - gate - to - source voltage (v)
ace 2302 n - channel enhancement mode mosfet ver 1. 3 4 on - resistance vs. drain current capacitance i d - drain current (a) v d s - drain - to - source voltage (v) gate charge on - resistance vs. junction temperature q g - total gate charge (nc) t j - junction temperature ( ) source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v)
ace 2302 n - channel enhancement mode mosfet ver 1. 3 5 threshold voltage single pulse p ower t j - temperature( ) time (sec) normalized thermal transient impedan ce, junction - to - ambient square wave pulse duration ( s ec)
ace 2302 n - channel enhancement mode mosfet ver 1. 3 6 packing information so t - 23 - 3
ace 2302 n - channel enhancement mode mosfet ver 1. 3 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, a nd shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or sys tem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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